super fast recovery diode RFN16T2D ? applications ? dimensions (unit : mm) ? structure general rectification ? features 1)cathode common dual type. (to-220) 2)low v f 3)low switching loss ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ?c) symbol limits unit v rm 200 v v r 200 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit forward voltage v f 0.90 0.98 v i r 0.01 10 a trr 16 30 ns thermal resistance rth(j-c) 2.5 c/w * per diode reverse voltage repetitive peak reverse voltage parameter 16 a 100 a forward current surge peak i fsm average rectified forward current io storage temperature conditions duty 0.5 direct voltage 60hz half sin wave, resistance load, 1/2io at per diode tc=100c 60hz half sin wave, non-repetitive one cycle peak value, tj=25c junction temperature reverse recovery time junction to case reverse current parameter conditions i f =8a v r =200v i f =0.5a,i r =1a,irr=0.25i r rohm : to220fn 1.2 1.3 0.8 (1) (2) (3) 10.00.3 0.1 5.00.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 rfn16 t2d 14.00.5 dot (year week factory) 1/4 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFN16T2D 1 10 100 0.001 0.01 0.1 1 10 100 0 500 1000 1500 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c per diode 1 10 100 1000 10000 0 50 100 150 200 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics per diode 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz tj=25 c per diode 800 850 900 950 1000 v f dispersion map forward voltage:v f (mv) ave:894.5mv tj=25 c i f =8a n=20pcs per diode reverse current:i r (na) i r dispersion map tj=25 c v r =200v n=20pcs per diode ave:14.2na 180 200 220 240 ave:221.5pf ta=25 c f=1mhz v r =0v n=10pcs per diode capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN16T2D 150 200 250 ave:204.5a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:14.7ns tj=25 c i f =0.5a i r =1a irr=0.25 i r n=10pcs per diode trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 10 100 1000 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 no break at 30kv c=100pf r=1.5k no break at 30kv electrostatic discharge test esd(kv) esd dispersion map time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - c) rth(j - a) 3/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN16T2D 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 5 10 15 20 25 30 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=100 c d=t/t t v r io v r =100v 0a 0v 4/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
